Dc500 mhz, cascadable ingap gaas hbt mmic amplifier. Two monolithic microwave integrated circuit mmic driver amplifiers and a mmic hpa are. For achieving the highly linear power amplifier, the active biasing circuits have been optimized for the 1 st and 2 ndstages thirdorder intermodulation distortion products imd3s by. The oscillator circuit consists of a negative resistance generating circuit with base inductors, a resonating emitter circuit with microstrip lines and a buffing resistive collector circuit with tuning diodes. Since this particular series is not uncon ditionally stable, there are a few special considerations. It incorporates an onchip active bias arrangement that is optimised to dynamically control the amplifier bias to realise low.
Monolithic ingap hbt mmic amplifier page 2 of 4 iso 9001 iso 14001 as 9100 certified minicircuits p. Freescales gaas mmic portfolio offers products utilizing enhancement mode phemt ephemt, hfet and ingap hbt device technologies. Liu, xiang, reliability study of ingapgaas heterojunction bipolar transistor mmic technology by characterization, modeling and simulation 2011. Inp hbt ldmos rf mems sba4086z dcto5ghz, cascadable ingapgaas hbt mmic amplifier rfmds sba4086z is a high performance ingapgaas heterojunction bipolar transistor mmic amplifier. Nga3 devices are broadband ingapgaas hbt mmic amplifiers offering good output ip3 and flat gain response for applications requiring high gain and high linearity naes are broadband ingapgaas hbt mmic amplifiers offering good output ip3 and flat gain response for applications requiring high gain. The lx5535 is a power amplifier optimized for wlan applications in the 2. High performance ingap hbt mmic amplifier, internally matched to 50 ohms. High linear hbt mmic power amplifier with partial rf coupling to. Low power consumption ingapgaas hbt mmic power amplifier for 56 ghz wireless lan terminals. Monolithic ingap hbt mmic amplifierpage 4 of 5notesa.
Heterojunction bipolar transistor technology ingap hbt. Pdf a singlechip dualmode power amplifier monolithic microwave integrated circuit mmic. The amplifier is bonded to a multilayer integrated ltcc. This paper proposes a high linearity twostage ingap gaas heterojunction bipolar transistor hbt power amplifier monolithic microwave integrated circuit mmic, using a new onchip linearizer, for 1. Electrical specifications and performance data contained in this specification document are based on minicircuits applicable established test. A08 monolithic amplifier mmic mar8 datasheet, cross reference, circuit and. An ingap gaas heterojunction bipolar transistor hbt analog multipliermixer monolithic microwave integrated circuit mmic is developed that adopts a gilbertcell multiplier with broadband. The mar8asm is a monolithic microwave integrated circuit mmic that incorporates reliable heterojunctionbipolartransistor hbt devices fabricated with ingap gaas technology. Antar department of electrical and computer engineering, queens university, kingston, on. This paper proposes a high linearity twostage ingapgaas heterojunction bipolar transistor hbt power amplifier monolithic microwave integrated circuit. Power and linearity performance of a cascode ingapgaas. A one shunt capacitor is added to a novel active bias circuit and acts as a lineariser improving input p1db of 16 db and phase distortion of 5. This paper describes circuit design and measurement results of a newly developed ingap gaas hbt mmic power amplifier module pa which can operate with 2.
With improved epistructure, layout and process, the device can be survived at 25. The mma25312b is a 2stage high efficiency ingap hbt driver amplifier designed for use in 2400 mhz ism applications, wlan 802. Designed to run dire ctly from a 5v supply, the cgb1089z. Abstract a 4w super ruggedness ingap gaas hbt for gsm power amplifier applications is presented. Devices with high fmax can be fabricated with moderate emittergeometries and proven, commercial parts are widely available. Monolithic ingap hbt mmic amplifieriso 9001 iso 14001 as 9100 certifiedminicircuitsp. A novel 20 to 40 ghz monolithic ingapgaas hbt double balanced mixer karim w. Reliability study of ingapgaas heterojunction bipolar. Minicircuits gali6 ingap hbt smt amplifiers dc4ghz 5pcs.
Dcto5ghz, cascadable ingapgaas hbt mmic amplifier product. B ox 3 50166, b rooklyn, new y ork 1 1 2 3 50 003 7 18 9 3 44 500 fax 7 1 8 3324661 the design engi neers search engi ne provides actual data instantly a t. Gainpgaas power hbt mmic process, gaas00 symposium digest. Monolithic ingap hbt mmic amplifier page 3 of 5 notes a. Ingap hbt is being increasingly adopted as the technology of choice for low voltage pas, integrated vcos and broadband dc coupled amplifiers. An xband ingap gaas hbt mmic oscillator sciencedirect. A singlechip dualband power amplifier monolithic microwave integrated circuit mmic operating at 3. Group delay equalised monolithic microwave integrated. Singlechip dualband wlan power amplifier using ingap. Pdf 10 watt high efficiency gaas mmic power amplifier. A super ruggedness ingapgaas hbt for gsm power amplifiers.
Gaas, ingap, hbt, mmic, ultralow phase noise, distributed. A broadband power amplifier design approach was used to design several monolithic microwave integrated circuits mmics using a 0. Mma25312b, linear amplifier, gaas mmic, ingap hbt, ism, wlan, femtocell. It can be used for a range of applications including unii and 802. Box 350166, brooklyn, new y ork 112350 003 7 18 9 344500 fax 7 18 3324661 the design engi ne ers search engi ne provides actual data in stantly at. A high linearity ingap gaas heterojunction bipolar transistor hbt monolithic microwave integrated circuit mmic power amplifier is demonstrated using a new structure for a bias circuit for widebandcode division multiple access wcdma application. This article discusses a commercially available ingap hbt mmic process and. The linearizer consists of the baseemitter junction diode of the bias transistor and the rf coupling capacitor. A darlington configuration designed with ingap process technology provides broadband performance up to 5ghz with excellent thermal performance. An ingapgaas hbt mmic smart power amplifier for wcdma mobile handsets article in ieee journal of solidstate circuits 386.
An ingap gaas hbt mmic smart power amplifier for wcdma mobile handsets abstract. Hmc606lc5 datasheet and product info analog devices. Mmics are ics, containing active, passive, and interconnect components and designed to operate at frequencies from hundreds of mhz to hundreds of ghz. A 117ghz ingapgaas hbt mmic analog multiplier and mixer. Monolithic ingap hbt mmic amplifier iso 9001 iso 14001 as 9100 certified minicircuits p. The following two new circuit techniques are proposed for implementing the power amplifier. The rfca1008 is a highperformance ingap hbt mmic amplifier. The dualband power amplifier constructed based on the design of adaptive rf. Monolithic microwave integrated circuit, or mmic sometimes pronounced mimic, is a type of integrated circuit ic device that operates at microwave frequencies 300 mhz to 300 ghz. The ephemt and hfet devices offer higher oip3 relative to hbt. A high linearity ingapgaas heterojunction bipolar transistor hbt monolithic microwave integrated circuit mmic power amplifier is demonstrated using a new structure for a bias circuit for widebandcode division multiple access wcdma application. Electrical specifications and performance data contained in this specification document are based on minicircuits applicable established test performance criteria.
An ingapgaas hbt mmic smart power amplifier for wcdma. This paper describes the design and experimental results for a 3. A group delay equalised ingap gaas hbt monolithic microwave integrated circuit mmic amplifier with an active balun for ultrawideband uwb application has been developed. This paper describes the performance of a cascode ingapgaas hbt distributed amplifier for instrument applications. For the simple circuit topology in mmic, the fundamental output impedance at. Monolithic microwave integrated circuits an overview. Gali5 datasheet24 pages mini surface mount monolithic. The device is manufactured with an ingap gaas heterojunction bipolar transistor hbt ic process mocvd. With an input signal of 12 ghz, the amplifier provides ultralow phase noise. A novel 20 to 40 ghz monolithic ingapgaas hbt double. Sbfwl2125a datasheet, sbfwl2125a pdf, sbfwl2125a data sheet, sbfwl2125a manual, sbfwl2125a pdf, sbfwl2125a, datenblatt, electronics sbfwl2125a, alldatasheet, free, datasheet, datasheets, data sheet, datas sheets, databook, free datasheet. Monolithic ingap hbt mmic amplifier iso 1 iso 141 as 1 certified min icir cuits p. Monolithic ingap hbt mmic amplifier iso 001 iso 14001 as 100 certified min icir cuits p. Low power consumption ingapgaas hbt mmic power amplifier for.
An ingapgaas hbt mmic smart power amplifier for wcdma mobile handsets joon hyung kim, ji hoon kim, youn sub noh, student member, ieee, and chul soon park, member, ieee abstract we demonstrate a new linearized monolithic microwave integrated circuit smart power amplifier of extraordinary high poweradded efficiency pae, especially at. Gali55 datasheet24 pages mini monolithic amplifier dc4 ghz. Qty, monolithic ingap hbt mmic amplifier electrical. Inp hbt ldmos rf mems sbb1089z 50 mhz to 850 mhz, cascadable active bias ingap hbt mmic amplifier rfmds sbb1089z is a high performance ingap hbt mmic amplifier utilizing a darlington configuration with an active bias network. Performance and quality attributes and conditions not expressly stated in this specification document are intended to be excluded and do not form a part of this specification document. Com eurotec operations, loughmahon technology park, skehard road, cork, ireland. A universal gaas hbt pa with active bias circuitry, covering. Design, test and realisation of gaasbased monolithic integrated x. B ox 350166, b rooklyn, new y ork 112350 003 7 18 9 344 500 fax 7 18 3324661 the design engineers search engine provides actual data instantly at. In particular, the linearity of the distributed amplifier is considered. Ingapgaas hbt mmic catv amplifier product description.
Ingap transistors are formed on gaas substrates with gaas collectors and bases and ingap emitters. Pdf singlechip dualmode power amplifier mmic using gaas e. The active bias network provides stable current over temperature and process beta variations. Rfmd rfca1008 highperformance ingap hbt mmic amplifier. Monolithic microwave integrated circuits mmic broadband. Monolithic ingap hbt mmic amplifier iso 9001 iso 14001 as 9100 certified min icircuits p. A high linearity ingap gaas heterojunction bipolar transistor hbt monolithic. A highgain, lownoise mmic amplifier a similar microstripline test amplifier was built using a single msa0835 mmic. A universal gaas hbt pa with active bias circuitry. Ingap gaas hbt mmic catv amplifier rfmds cgb1089z is a high performance ingap hbt mmic amplifier utilizing a darlington configuration with a 75.
I chose a 200011m, 12w carbon resistor to bias the mmic at 25 ma tions of the 04 series mmlcs and measured. Its designed with the ingap process technology that offers excellent reliability. Clive poole, izzat darwazeh, in microwave active circuit analysis and design, 2016. Electrical speci cations and performance data contained in this speci cation document are based on minicircuit s applicable established test performance criteria. The amplifier is bonded to a multilayer integrated ltcc substrate, then hermetically sealed under. Power and linearity performance of a cascode ingapgaas hbt. Performance and quality attributes and conditions not expressly stated in this speci. High linear hbt mmic power amplifier with partial rf.
Linearised ingapgaas hbt mmic power amplifier with active. Performance and quality attributes and conditions not expressly stated in this speci cation document are intended to be excluded and do not form a part of this speci cation document. The dualband power amplifier constructed based on the design of adaptive rf bias. Active bias ingap hbt mmic amplifier product description features. Monolithic ingap hbt mmic amplifier iso 9001 iso 14001 as 9100 certified min icir cuits p. Our mmic monolithic microwave integrated circuit devices offering includes. Page 2 of 4 monolithic ingap hbt mmic amplifier product marking 3 mar, 8sm and msa0886a,b benefits. We demonstrate a new linearized monolithic microwave integrated circuit smart power amplifier of extraordinary high poweradded efficiency pae, especially at the most probable transmission power of wideband codedivision multipleaccess handsets.
The hmc606lc5 is a gallium arsenide gaas, indium gallium phosphide ingap, heterojunction bipolar transistor hbt, monolithic microwave integrated circuit mmic distributed amplifier housed in a 32terminal, ceramic, leadless chip carrier lcc package that operates from 2 ghz to 18 ghz. The basics to download the project files referred to in this video visit. The group delay equaliser was designed based on a theory using a composite rightlefthanded crlh transmission line. Packaged in a miniature 16 lead qsop plastic package, the amp. The mmic consists of a broadband amplifier with an active balun and a group delay equaliser. It uses patented, transient protection darlington configuration circuit architecture and is fabricated using ingap hbt technology. Mini, alldatasheet, datasheet, datasheet search site for electronic components and semiconductors, integrated circuits, diodes, triacs, and other semiconductors. This portfolio offers amplifier devices with p1db from 15 to 33 dbm and low noise amplifiers lna with noise figures below 0.
The pa is implemented as a threestage monolithic microwave integrated circuit mmic with active bias and output prematching. This paper describes a highly linear twostage power amplifier monolithic microwave integrated circuit mmic for the 1. To our knowledge, this is the highest ruggedness achieved for a 4w ingap gaas hbt. These devices typically perform functions such as microwave mixing, power amplification, lownoise amplification, and highfrequency switching.